| PART |
Description |
Maker |
| TS02A-17 |
NON-INDUCTIVE, COATED WITH EPOXY RESIN OR FLAME RETARDANT EPOXY POWER
|
Suntan Capacitors
|
| AMT8100T46L AMT8100 |
JT 16C 16#16 SKT RECP
1.25Gb/s Integrated 850nm MSM-TIA
1.25 Gb/s Integrated 850nm MSM-TIA
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| OSPRO2X3-I3CAS1C1A OSPRO2X3-I5LAS1C1A OSPRO2X3-XXX |
12V 850nm & 940nm Infrared SMD LED Ring Diameter(outer): 42.1mm
12V 850nm & 940nm Infrared SMD LED Ring Total Watts: 0.3W
|
OptoSupply International
|
| TLP590B |
SPECIALTY OPTOELECTRONIC DEVICE
GaAS As Ired & Photo−Diode Array
Photocoupler GaAlAs Ired & Photo .Diode Array
|
Toshiba Semiconductor
|
| AMT8302T56F AMT8302 AMT8302T56L |
2125 Gb/s integrated 850 nm MSM-TIA
2.125Gb/s Integrated 850nm MSM-TIA
2.125 Gb/s Integrated 850nm MSM-TIA
|
ANADIGICS, Inc.
ANADIGICS Inc
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| AMT128503T46L AMT128503T56F AMT128503 AMT128503T46 |
125 Gb/s integrated 850 nm MSM-TIA
1.25Gb/s Integrated 850nm MSM-TIA
1.25 Gb/s Integrated 850nm MSM-TIA
|
ANADIGICS Inc
ANADIGICS[ANADIGICS Inc]
ANADIGICS[ANADIGICS, Inc]
|
| TLP2166A |
PHOTOCOUPLER GaA?As Ired & PHOTO-IC
PHOTOCOUPLER GaA搂陇As Ired & PHOTO-IC
|
Toshiba Semiconductor
|
| TLP2105 |
PHOTOCOUPLER GaA?As Ired & PHOTO-IC
PHOTOCOUPLER GaA搂陇As Ired & PHOTO-IC
|
Toshiba Semiconductor
|
| HFE4080-321 |
1.25Gbps 850nm VCSEL, TO-46
|
Finisar Corporation.
|
| AMT8504T46L AMT8504T46F |
1.25 Gb/s Integrated 850nm MSM-TIA
|
ANADIGICS, Inc.
|
| MTD5010W |
Peak Sensitivity Wavelength: 850nm
|
Marktech Corporate
|
